RF power measurements of InAlN/GaN unstrained HEMTs on SiC substrates at 10 GHzJESSEN, G. H; GILLESPIE, J. K; VIA, G. D et al.IEEE electron device letters. 2007, Vol 28, Num 5, pp 354-356, issn 0741-3106, 3 p.Article

300-GHz InAlN/GaN HEMTs With InGaN Back BarrierDONG SEUP LEE; XIANG GAO; SHIPING GUO et al.IEEE electron device letters. 2011, Vol 32, Num 11, pp 1525-1527, issn 0741-3106, 3 p.Article

Time delay analysis in high speed gate-recessed E-mode InAIN HEMTsSENSALE-RODRIGUEZ, Berardi; JIA GUO; XIANG GAO et al.Solid-state electronics. 2013, Vol 80, pp 67-71, issn 0038-1101, 5 p.Article

InAIN Barrier Scaled Devices for Very High f_T and for Low-Voltage RF Applications : GaN ELECTRONIC DEVICESSAUNIER, Paul; SCHUETTE, Michael L; CHOU, Tso-Min et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3099-3104, issn 0018-9383, 6 p.Article

Gate-Recessed Enhancement-Mode InAIN/AIN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm TransconductanceRONGHUA WANG; SAUNIER, Paul; XIU XING et al.IEEE electron device letters. 2010, Vol 31, Num 12, pp 1383-1385, issn 0741-3106, 3 p.Article

InAIN/GaN HEMTs With AlGaN Back BarriersLEE, Dong Seup; XIANG GAO; SHIPING GUO et al.IEEE electron device letters. 2011, Vol 32, Num 5, pp 617-619, issn 0741-3106, 3 p.Article

Characteristics of In_xAl_1-xN-GaN high-electron mobility field-effect transistorKATZ, Oded; MISTELE, David; MEYLER, Boris et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 2, pp 146-150, issn 0018-9383, 5 p.Article

Structural and optical properties of Ga auto-incorporated InAIN epilayersTAYLOR, E; SMITH, M. D; SADLER, T. C et al.Journal of crystal growth. 2014, Vol 408, pp 97-101, issn 0022-0248, 5 p.Article

Structural and compositional homogeneity of InAIN epitaxial layers nearly lattice-matched to GaNMANUEL, J. M; MORALES, F. M; LOZANO, J. G et al.Acta materialia. 2010, Vol 58, Num 12, pp 4120-4125, issn 1359-6454, 6 p.Article

Barrier-Layer Scaling of InAlN/GaN HEMTsMEDJDOUB, F; ALOMARI, M; CARLIN, J.-F et al.IEEE electron device letters. 2008, Vol 29, Num 5, pp 422-425, issn 0741-3106, 4 p.Article

Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO₂ or HfO₂KUZMIK, Jan; POZZOVIVO, Gianmauro; ABERMANN, Stephan et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 937-941, issn 0018-9383, 5 p.Article

Explanation of threshold voltage scaling in enhancement-mode InAIN/AIN-GaN metal oxide semiconductor high electron mobility transistors on Si substratesALEXEWICZ, A; OSTERMAIER, C; HENKEL, C et al.Thin solid films. 2012, Vol 520, Num 19, pp 6230-6232, issn 0040-6090, 3 p.Article

Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxyKAMIMURA, Jumpei; KOUNO, Tetsuya; ISHIZAWA, Shunsuke et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 160-163, issn 0022-0248, 4 p.Conference Paper